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Datasheet MSN0360D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MSN0360D   N-Channel Enhancement Mode Power MOS FET

MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package fo
 MORESEMI
MORESEMI		 datasheet MSN0360D pdf

MSN03 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MSN0306

N-Channel Enhancement Mode Power MOS FET

MSN0306 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface moun
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0304

N-Channel Enhancement Mode Power MOS FET

MSN0304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Bat
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0380D

N-Channel Enhancement Mode Power MOS FET

MSN0380D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and un
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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