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Datasheet MSG36E41 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MSG36E41 | SiGe HBT type Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area |
 Panasonic Semiconductor |
 |
| 1 | MSG36E41 | SiGe HBT type Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area |
Panasonic Semiconductor |
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