MS1252 データシート PDFこの部品の機能は「Rf And MICrowave Transistors Hf - Vhf CommunICation ApplICations」です。 |
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部品番号 |
MS1252 RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS www.Datasheet.jp 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1252 RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS Features • Advanced Power Technology |
文字列「 MS1252 」「 1252 」で始まる検索結果です。 |
部品説明 |
2N1252 Trans GP BJT NPN 45V 5A 3-Pin TO-61 New Jersey Semiconductor |
2SA1252 For AF Applications Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2S Sanyo Semicon Device |
2SB1252 Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q q 0.7±0.1 14.0±0.5 Optimum for 35W HiFi output High foward current tra Panasonic Semiconductor |
2SC1252 2SC1252 2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: • High Gain -17 dB Typ. @ 200 MHz • Low NF - 3.0 dB Typ. @ 200 MHz � Advanced Semiconductor |
2SD1252 Silicon NPN triple diffusion planar type(For power amplification) Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High forward current transfer ratio hFE which has satisfactory li Panasonic Semiconductor |
2SD1252 Silicon PNP epitaxial planar type(For power amplification) Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High forward current transfer ratio hFE which has satisfactory li Panasonic Semiconductor |
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