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Datasheet MRF8S26120HR3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MRF8S26120HR3 | RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MRF8S26120H Rev. 0, 6/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class |
 Motorola Semiconductors |
 |
| 1 | MRF8S26120HR3 | RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MRF8S26120H Rev. 0, 6/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class |
Motorola Semiconductors |
|
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