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Datasheet MRF6VP11KHR6 Equivalent ( PDF ) |
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1 | MRF6VP11KHR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data
Document Number: MRF6VP11KH Rev. 0, 1/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in indus |
Freescale Semiconductor |
MRF6VP11K Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MRF6VP11KHR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
Freescale Semiconductor |
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