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Datasheet MRF6V2300NB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MRF6V2300NB | RF Power Field Effect Transistor
Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 4, 10/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver applications with frequencie |
 Motorola Semiconductor |
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| 1 | MRF6V2300NBR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF6V2300N Rev. 2, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are |
 Freescale Semiconductor |
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