Datasheet MRF6V2010NBR1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF6V2010NBR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are s	Freescale Semiconductor

MRF6V2010N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF6V2010NR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are	Freescale Semiconductor
MRF6V2010NB	RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applicat	Motorola Semiconductor
MRF6V2010NBR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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