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MRF650 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 MRF650

RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 5

Motorola
Motorola
MRF650 データシート pdf



MRF Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
MRF448

Trans GP BJT NPN 50V 16A 4-Pin Case 211-11

New Jersey Semiconductor
New Jersey Semiconductor
MRF650 データシート pdf
MRFIC1859

Dual Band / GSM 3.6V Integrated Power Amplifier

Order this document by MRFIC1859/D Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminat

Motorola
Motorola
MRF650 データシート pdf
MRF19060SR3

RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CD

Motorola
Motorola
MRF650 データシート pdf
MRF224

Trans GP BJT NPN 18V 7A 4-Pin Case 211-07

New Jersey Semiconductor
New Jersey Semiconductor
MRF650 データシート pdf
MRF5S19090HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. S

Freescale Semiconductor
Freescale Semiconductor
MRF650 データシート pdf
MRF313

NPN SILICON RF TRANSISTOR

MRF313 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VC

ASI
ASI
MRF650 データシート pdf
MRF3866R2

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF3866G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Low Cost SO-8 Plastic Surface Mount Packa

Advanced Power Technology
Advanced Power Technology
MRF650 データシート pdf


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The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications.
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The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile to support BLE application. The Flash program memory makes it suitable for customized applications.
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C1318

This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package.

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VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package.

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20N60C2

650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2.

Infineon Technologies
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