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MRF650 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 MRF650

RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 5

Motorola
Motorola
MRF650 データシート pdf



MRF Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
MRF393

Trans GP BJT NPN 30V 16A 8-Pin Case 744A-01

New Jersey Semiconductor
New Jersey Semiconductor
MRF650 データシート pdf
MRFG35005NT1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and i

Freescale Semiconductor
Freescale Semiconductor
MRF650 データシート pdf
MRF18090B

LATERAL N-CHANNEL RF POWER MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for

Motorola
Motorola
MRF650 データシート pdf
MRF21010LSR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications w

Motorola
Motorola
MRF650 データシート pdf
MRF5812MR1

Trans GP BJT NPN 15V 0.2A 8-Pin SOIC

New Jersey Semiconductor
New Jersey Semiconductor
MRF650 データシート pdf
MRF8S19140HR3

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990

Freescale Semiconductor
Freescale Semiconductor
MRF650 データシート pdf
MRF10150

MICROWAVE POWER TRANSISTORS

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D Microwave Pulse Power Transistor . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 M

Motorola
Motorola
MRF650 データシート pdf


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