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Datasheet MRF19060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MRF19060 | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF19060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and mu |
 Motorola Semiconductors |
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| 4 | MRF19060LR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF19060 Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier |
 Freescale Semiconductor |
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| 3 | MRF19060LSR3 | RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF19060 Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier |
Freescale Semiconductor |
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| 2 | MRF19060R3 | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF19060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and mu |
Motorola Semiconductors |
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