MRF18090B データシート PDFこの部品の機能は「Lateral N-channel Rf Power Mosfets」です。 |
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部品番号 |
MRF18090B LATERAL N-CHANNEL RF POWER MOSFETs MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and ED Motorola Semiconductors |
文字列「 MRF18090 」「 18090B 」で始まる検索結果です。 |
部品説明 |
MRF18090A LATERAL N-CHANNEL RF POWER MOSFETS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for Motorola Semiconductors |
MRF18090AR3 RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, Freescale Semiconductor |
MRF18090AS LATERAL N-CHANNEL RF POWER MOSFETS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for Motorola Semiconductors |
MRF18090BR3 LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CD Freescale Semiconductor |
MRF18090BS LATERAL N-CHANNEL RF POWER MOSFETs MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for Motorola Semiconductors |
MRF18090BSR3 LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CD Freescale Semiconductor |
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