データシート PDF 検索 - DataSheet.jp

MRF18090B データシート PDF

この部品の機能は「Lateral N-channel Rf Power Mosfets」です。


検索結果を表示する

部品番号
MRF18090B

LATERAL N-CHANNEL RF POWER MOSFETs


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and ED


Motorola Semiconductors
Motorola Semiconductors

データシート pdf



文字列「 MRF18090 」「 18090B 」で始まる検索結果です。

部品説明

MRF18090A

LATERAL N-CHANNEL RF POWER MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF18090AR3

RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA,

Freescale Semiconductor
Freescale Semiconductor

 データシート pdf


MRF18090AS

LATERAL N-CHANNEL RF POWER MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF18090BR3

LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CD

Freescale Semiconductor
Freescale Semiconductor

 データシート pdf


MRF18090BS

LATERAL N-CHANNEL RF POWER MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF18090BSR3

LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CD

Freescale Semiconductor
Freescale Semiconductor

 データシート pdf

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