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Datasheet MMBTA64LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MMBTA64LT1 | Darlington Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 1
MMBTA63LT1 MMBTA64LT1*
*Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage |
 Motorola Semiconductors |
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| 3 | MMBTA64LT1 | Darlington Transistors(PNP Silicon)
MMBTA63LT1, MMBTA64LT1
MMBTA64LT1 is a Preferred Device
Darlington Transistors
PNP Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 1 EMITTER 2 3 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C = Device Code x = U for MMBTA63LT1 x = |
 ON |
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| 2 | MMBTA64LT1 | Darlington Transistors(PNP Silicon) |
 Leshan Radio Company |
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| 1 | MMBTA64LT1G | Darlington Transistors MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors
PNP Silicon
Features http://onsemi.com
AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements Compliant*
These Devices are Pb−Free, Haloge |
 ON Semiconductor |
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