MMBTA13 PDF Datasheet

MMBTA13 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 电流增益高。 High current gain.  用途 / Applications 适用于要求极高电流增益的设备。 Applications requiring extremely high current gain device designed.  内部等效电路 /

MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63 /MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBTA13 MMBTA14 • • • • Operating And Storage Temperatures –55OC to 150OC RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) Capable of 225mWatts of Power Dissipation Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N NPN Darling

MMBTA13 NPN Darlington Transistor January 2005 MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 SOT-23 1 Mark: 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Sy