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Datasheet MMBD6100LT1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | MMBD6100LT1 | Monolithic Dual Switching Diodes MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD6100LT1/D
Monolithic Dual Switching Diode
ANODE 1 2 ANODE
MMBD6100LT1
3 CATHODE
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc |
Motorola Semiconductors |
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3 | MMBD6100LT1 | Monolithic Dual Switching Diode MMBD6100LT1 Monolithic Dual Switching Diode
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Symbol VR IF IFM(surge) Reverse Voltage Forward Current Peak Forward Surge Current Rating Value 70 200 500 Unit Vdc mAdc mAdc PLASTIC SOT–23S CASE 318
1 2 3
THERMAL CHARACTERISTICS
Symbol PD Characteristic |
ON |
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2 | MMBD6100LT1 | Monolithic Dual Switching Diodes |
Leshan Radio Company |
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1 | MMBD6100LT1G | Monolithic Dual Switching Diode MMBD6100LT1G
Monolithic Dual Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
VR IF IFM(surge)
70 20 |
ON Semiconductor |
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