MM74HC00N データシート PDFこの部品の機能は「Quad 2-input Nand Gate」です。 |
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部品番号 |
MM74HC00N Quad 2-Input NAND Gate MM74HC00 — Quad 2-Input NAND Gate February 2008 MM74HC00 Quad 2-Input NAND Gate Features ■ Typical propagation delay: 8ns ■ Wide power supply range: 2V–6V ■ Low quiescent current: 20µA m Fairchild |
文字列「 MM74HC00 」「 74HC00N 」で始まる検索結果です。 |
部品説明 |
MM74HC00 Quad 2-Input NAND Gate MM74HC00 — Quad 2-Input NAND Gate February 2008 MM74HC00 Quad 2-Input NAND Gate Features ■ Typical propagation delay: 8ns ■ Wide power supply range: 2V–6V ■ Low quiescent current: 20µA maximum (74HC Series) ■ Low input current: 1µA maximum ■ Fanout of 10 LS-TTL Fairchild |
MM74HC00 Quad 2-Input NAND Gate MM54HC00 MM74HC00 Quad 2-Input NAND Gate January 1988 MM54HC00 MM74HC00 Quad 2-Input NAND Gate General Description These NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS National Semiconductor |
MM74HC00M Quad 2-Input NAND Gate MM74HC00 — Quad 2-Input NAND Gate February 2008 MM74HC00 Quad 2-Input NAND Gate Features ■ Typical propagation delay: 8ns ■ Wide power supply range: 2V–6V ■ Low quiescent current: 20µA maximum (74HC Series) ■ Low input current: 1µA maximum ■ Fanout of 10 LS-TTL Fairchild |
MM74HC00MTC Quad 2-Input NAND Gate MM74HC00 Quad 2-Input NAND Gate September 1983 Revised February 1999 MM74HC00 Quad 2-Input NAND Gate General Description The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of s Fairchild |
MM74HC00SJ Quad 2-Input NAND Gate MM74HC00 Quad 2-Input NAND Gate September 1983 Revised February 1999 MM74HC00 Quad 2-Input NAND Gate General Description The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of s Fairchild |
2N7400 N-Channel Power MOSFET / Transistor JANSR2N7400 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. En Intersil Corporation |
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