Datasheet MLN1037F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MLN1037F	NPN SILICON RF POWER TRANSISTOR MLN1037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1037F is Designed for B C E PACKAGE STYLE .250 2L FLG A ØD .060 x 45° CHAMFER FEATURES: • • • Omnigold™ Metalization System DIM G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS	Advanced

MLN10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MLN1037S	NPN SILICON RF POWER TRANSISTOR MLN1037S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1037S is Designed for PACKAGE STYLE .280 4L STUD A 45° D S G FEATURES: • • • Omnigold™ Metalization System B S D C J E F G I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @	Advanced
MLN1037F	NPN SILICON RF POWER TRANSISTOR MLN1037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1037F is Designed for B C E PACKAGE STYLE .250 2L FLG A ØD .060 x 45° CHAMFER FEATURES: • • • Omnigold™ Metalization System DIM G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATI	Advanced
MLN1033S	NPN SILICON RF POWER TRANSISTOR MLN1033S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1033S is Designed for PACKAGE STYLE .280 4L STUD A 45° D B FEATURES: • • • Omnigold™ Metalization System S G D C S J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O G H K DIM A B C D E F G H	Advanced

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Número de pieza	Descripción	Fabricantes	PDF
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