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Datasheet MJE703 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | MJE703 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications |
Central Semiconductor |
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8 | MJE703 | Monolithic Construction With Built-in Base- Emitter Resistors MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute M |
Fairchild |
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7 | MJE703 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic |
Motorola Semiconductors |
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6 | MJE703 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features
http://onsemi.com
• High DC Current Gain − h |
ON |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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