INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturatio

www.Datasheet.jp MJ3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sea

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ3000/3001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applic

MJ3000 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ3000/3001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applic

www.datasheet.jp INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=1V(Max)@Ic=15A ·Low Leakage Icbo=1mA(max)@50V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATI

PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. Th