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データシート ME4856 PDF ( Circuit Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | ME4856 | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This hig |
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ME4 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| ME4812-G | N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is |
Matsuki |
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| ME400802 | Diode |
 American Microsemiconductor |
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| ME400402 | Diode |
American Microsemiconductor |
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| ME4948-G | Dual N-Channel 60-V (D-S) MOSFET Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4948 is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These de |
Matsuki |
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| ME400403 | Diode |
American Microsemiconductor |
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| ME4812B-G | N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t |
Matsuki |
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