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ME4856 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 2 | ME4856 | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook comp |
 Matsuki |
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| 1 | ME4856-G | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook comp |
Matsuki |
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