ME4856 データシート PDF 検索

番号	部品番号	部品説明	メーカ	PDF
2	ME4856	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook comp	Matsuki
1	ME4856-G	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook comp	Matsuki

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