Datasheet ME4812B-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME4812B-G	N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize	Matsuki

ME4812 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME4812	N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is	Matsuki
ME4812B	N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t	Matsuki
ME4812B-G	N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t	Matsuki

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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