MDS3604 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | MDS3604 | Single P-Channel Trench MOSFET MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Feature |
 MagnaChip |
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MDS3 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| MDS3651 | Single P-Channel Trench MOSFET MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ General Description The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent re |
MagnaChip |
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| MDS35 | DIODE / SCR MODULE MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power |
 ST Microelectronics |
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| MDS3754A | P-channel Trench MOSFET MDS3754A – P-Channel Trench MOSFET MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description The MDS3754A uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON) |
MagnaChip |
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| MDS3753E | P-channel Trench MOSFET MDS3753E– P-Channel Trench MOSFET MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description The MDS3753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low g |
MagnaChip |
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| MDS3603 | P-Channel Trench MOSFET MDS3603– Single P-Channel Trench MOSFET MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1mΩ General Description The MDS3603 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching |
MagnaChip |
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| MDS35-800 | DIODE / SCR MODULE MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power |
ST Microelectronics |
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| MDS3653 | Single P-Channel Trench MOSFET MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ MDS3653 Single P-Channel Trench MOSFET, -30V, -14.6A, 7mΩ General Description The MDS3653 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management |
MagnaChip |
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