MDS3604 データシート PDF 検索

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technol

MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power

MDS3754A – P-Channel Trench MOSFET MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description The MDS3754A uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON)

MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ General Description The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent re

MDS3753E– P-Channel Trench MOSFET MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description The MDS3753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low g