データシート PDF 検索 - DataSheet.jp

MDF11N60 データシート PDF

この部品の機能は「N-channel Mosfet 600v」です。


検索結果を表示する

部品番号
MDF11N60

N-Channel MOSFET 600V


MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, hig


MagnaChip
MagnaChip

データシート pdf



文字列「 MDF11N60 」「 11N60 」で始まる検索結果です。

部品説明

11N60C3

SPP11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V

Infineon Technologies
Infineon Technologies

 データシート pdf


11N60K-MT

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim

Unisonic Technologies
Unisonic Technologies

 データシート pdf


11N60S5

SPP11N60S5

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated •

Infineon Technologies AG
Infineon Technologies AG

 データシート pdf


2SA1160

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SA1160

Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
TRANSYS Electronics Limited

 データシート pdf


2SB1160

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi

SavantIC
SavantIC

 データシート pdf

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