MDF11N60 データシート PDFこの部品の機能は「N-channel Mosfet 600v」です。 |
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部品番号 |
MDF11N60 N-Channel MOSFET 600V MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, hig MagnaChip |
文字列「 MDF11N60 」「 11N60 」で始まる検索結果です。 |
部品説明 |
11N60C3 SPP11N60C3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V Infineon Technologies |
11N60K-MT N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim Unisonic Technologies |
11N60S5 SPP11N60S5 SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Infineon Technologies AG |
2SA1160 Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 Toshiba Semiconductor |
2SA1160 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: - TRANSYS Electronics Limited |
2SB1160 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi SavantIC |
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