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Datasheet MBR25100CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MBR25100CT | Schottky Barrier Rectifiers MBR2535CT-MBR25150CT
25.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge c |
 LGE |
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| 3 | MBR25100CT | Dual Common Cathode Schottky Rectifier MBR2535CT thru MBR25150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halog |
 Taiwan Semiconductor Company |
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| 2 | MBR25100CT | (MBR25xxCT) SCHOTTKY BARRIER RECTIFIER BL
FEATURES
GALAXY ELECTRICAL
MBR2530CT---MBR25100CT
VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier co |
 BL |
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| 1 | MBR25100CT-Y | Dual Common Cathode Schottky Rectifier MBR2545CT-Y thru MBR25150CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- H |
 Taiwan Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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