Schottky Barrier Diodes (SBD) MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type 0.80±0.05 For switching I Features • High-density mounting is possible • Low forward voltage VF

Schottky Barrier Diodes (SBD) MA4X726 (MA726) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X721 (MA721) is contained in on

Schottky Barrier Diodes (SBD) MA111 MA750, MA750A Silicon epitaxial planer type (cathode common) For switching power supply s Features q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low fo

Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection s Features • Low forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification b

Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter R

Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forw

Schottky Barrier Diodes (SBD) MA3D749, MA3D749A Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 15.0 ± 0.5 9.9 ± 0.3 3.0 ± 0.5 4.6 ± 0.2 2.9 ± 0.2 I Features • Low forward rise voltage VF • TO-220D (Full-pack package) with high di