Free Datasheet http://www.Datasheet.jp/ Free Datasheet http://www.Datasheet.jp/

WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 W.1 Y.COM W M. OM W O W C . W C W . Y W .T W .100 .TW 00Y M.T .100 OM W O W C . W W.1 Y.COM W C W Y W WW .100Y. .TW M.T .100 .T 0

Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection s Features • Low forward voltage VF, optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification b

MA729 Schottky Barrier Diode FEATURES z For super-high speed switching circuit. z For small current rectification. z Allowing to rectify under(IF(AV)=200mA) condition. z Allowing high-density mounting. Pb Lead-free APPLICATIONS z Schottky epitaxial planar. ORDERING INFORMATI

Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the

Schottky Barrier Diodes (SBD) MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type 0.80±0.05 For switching I Features • High-density mounting is possible • Low forward voltage VF , optimum for low voltage rectification: VF < 0.3 V (at IF = 1 mA) • Optimum

Schottky Barrier Diodes (SBD) MA3Z792 (MA792) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 3 0.3+0.1 –0 0.15+0.1 –0.05 • High-density mounting is possible • IF(AV) = 100 mA rectification is possible • Optimum

MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire