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Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type Unit: mm 2.5±0.3 2 2.15±0.3 1.2±0.4 1.2±0.4 5.0+0.4 –0.1 8° 1 8° 0.25+0.1 –0.05 For high frequency rectification I Features • IF(AV) = 1 A rectification is possible •

MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire

Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25

Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter R

Schottky Barrier Diodes (SBD) MA3X721 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Sealed in the mini type mold package, allowing insertion • Allowing to rectify under (IF(AV) = 200 mA) condition

Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • Allowing to supply with the radial taping 27 min. I Features Cathode Colored band indicates Vz classification Parameter R