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Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type For band switching 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit : mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 • Non connected three elements incorporated in one package • Low forward dyna

Schottky Barrier Diodes (SBD) MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits • Small S-mini type 6-pin package • Non connected three elements incorporated in one package, allowing high-density mounting • Flat lead type package, resulting in promoti

Fast Recovery Diodes (FRD) MA111 MA695 Silicon planer type (cathode common) For high-frequency rectification s Features q q q q 0.7 15.0±0.3 11.0±0.2 Unit : mm 5.0±0.2 3.2 High reverse voltage VR Low forward voltage V F Fast reverse recovery time trr 21.0±0.5 15.0±0.2

Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type For small power current rectification 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit : mm 0.16+0.10 –0.06 0.30+0.10 –0.05 0.50+0.10 –0.05 I Absolute Maximum Ratings Ta =

APPLICATION SPECIFIC CAPACITORS HIGH FREQUENCY CERAMIC CAPACITORS MA/MB Series OUTSTANDING CHARACTERISTICS I Miniature size I Very high Q at high frequencies I High RF power capabilities I Impervious to environmental conditions I Low dissipation factors I Excellent retrace capabi