M216H5-L01 データシート PDFこの部品の機能は「Tft Lcd」です。 |
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部品番号 |
M216H5-L01 TFT LCD Issued Date: Feb. 17, 2009 Model No.: M216H5-L01 Tentative TFT LCD Tentative Specification MODEL NO.: M216H5-L01 Customer : Approved by : Note : 核准時間 部門 2009-04-10 16:55:33 MTR 產品 CHI MEI |
文字列「 M216H5L01 」「 216H5 」で始まる検索結果です。 |
部品説明 |
1N2165 Diode 600V 40A 2-Pin DO-5 New Jersey Semiconductor |
1N2165A Diode 600V 40A 2-Pin DO-5 New Jersey Semiconductor |
2SD2165 NPN Silicon Transistor DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying dri NEC |
2SD2165 Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2165 DESCRIPTION ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) APPLICATIONS ·Design Inchange Semiconductor |
2SK2165-01 N-channel MOS-FET 2SK2165-01 FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,03Ω 40A 100W > Outline Drawing > Applications - Motor Control - Ge Fuji Electric |
5962-9216501PA High Speed Operational Amplifier LM6162 LM6262 LM6362 High Speed Operational Amplifier September 1995 LM6162 LM6262 LM6362 High Speed Operational Amplifier General Description The LM6362 family of high-speed amplifiers exhibits an excellent speed-power product delivering 300 V ms and 100 MHz gain-bandwidth pro National Semiconductor |
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