LX9506 データシート PDFこの部品の機能は「Input Cable Assembly」です。 |
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部品番号 |
LX9506 Input Cable Assembly A M I C R O S E M I C O M P A N Y LX9506 Input Cable Assembly PRODUCTION DATA SHEET The LX9506 is an input-connector cable assembly that is used to connect Linfinity’s sta Microsemi Corporation |
文字列「 LX9506 」「 9506 」で始まる検索結果です。 |
部品説明 |
0895060 Fuses Cartridge Fuses Low Profile JCASE® Fuses Rated 58V Specifications Voltage Rating: Interrupting Rating: Operating Temperature Range: Insertion Force: Extraction Force: Packaging: 58 VDC 1000A @ 58 VDC -40˚C to + 125˚C 53N Max. (12 lb.) 9N Min (2 lb.) Series Littelfuse |
B59506 (B59xxxA) Motor Starting Motor Starting Metallized Disks Applications I Time delay in turning off the auxiliary winding of single-phase AC motors B59*** A 19*, A 314, A 5** (e.g. refrigerator compressors) I Type A 314 suitable for airconditioning systems applications Features I I I I I I Metallizatio EPCOS |
BUK9506-30 TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance an NXP Semiconductors |
BUK9506-40B TrenchMOS logic level FET BUK95/9606-40B TrenchMOS™ logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product av NXP Semiconductors |
BUK9506-55A TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is i NXP Semiconductors |
BUK9506-55A TrenchMOS logic level FET BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state NXP Semiconductors |
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