LTM213U6-L01 データシート PDFこの部品の機能は「Display Module」です。 |
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部品番号 |
LTM213U6-L01 Display Module www.Datasheet.jp Approval To Date : : 2005-09-05 SAMSUNG TFT-LCD MODEL NO. : LTM213U6-L01 Approved by : Any Modification of Spec is not allowed without SEC's permission. Y.D. Jo Prepared B Samsung |
文字列「 LTM213U6L01 」「 213U6 」で始まる検索結果です。 |
部品説明 |
12136AF Dolby B-Type Noise Reduction System HA12134A, HA12135A, HA12136A Dolby B-Type Noise Reduction System ADE-207-016B (Z) 3rd Edition Jun. 1999 Description The HA12134A, HA12135A, HA12136A are silicon monolithic bipolar IC series providing dual channel Dolby B-type noise reduction system* in one chip. The circuit is u Hitachi Semiconductor |
2SD2136 Silicon NPN triple diffusion planar type Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturatio Panasonic Semiconductor |
2SD2136 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power application. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation vol Unisonic Technologies |
2SD2136 NPN Plastic Encapsulated Transistor Elektronische Bauelemente 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio SeCoS |
2SD2136 NPN Transistor RoHS 2SD2136 2SD2136 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 1.25 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 3A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-126 1. EMITTER 2. COLLECT WEJ |
2SK2136 Switching N-Channel Power MOS FET NEC |
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