|
|
Datasheet LTE42008R Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | LTE42008R | NPN microwave power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42008R NPN microwave power transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Diffused emitter ballast |
NXP Semiconductors |
LTE420 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
LTE42005S | NPN microwave power transistor |
NXP Semiconductors |
|
LTE42008R | NPN microwave power transistor |
NXP Semiconductors |
|
LTE4208C | GaAs T-1 3/4 Standard Infrared Emitting Diode |
Lite-On Technology Corporation |
Esta página es del resultado de búsqueda del LTE42008R. Si pulsa el resultado de búsqueda de LTE42008R se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |