LTC3547 データシート PDFこの部品の機能は「Dual MonolithIC 300ma Synchronous Step-down Regulator」です。 |
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部品番号 |
LTC3547 Dual Monolithic 300mA Synchronous Step-Down Regulator FEATURES High Efficiency Dual Step-Down Outputs: Up to 96% ■ 300mA Output Current per Channel at V = 3V IN ■ Automatic Low Ripple Burst Mode Operation (20mVP-P) ■ Only 40µA Quiescent Current D Linear Technology |
文字列「 LTC3547 」「 3547 」で始まる検索結果です。 |
部品説明 |
LTC3547B Dual Monolithic 300mA Synchronous Step-Down Regulator LTC3547B Dual Monolithic 300mA Synchronous Step-Down Regulator FEATURES High Efficiency (Up to 96%) Dual Step-Down Outputs ■ 300mA Output Current per Channel at V = 3V IN ■ 2.25MHz Constant-Frequency Operation ■ 2.5V to 5.5V Input Voltage Range ■ Low Dropout Operation: 1 Linear Technology |
2N3547 Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MA Central Semiconductor |
2SC3547 NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications (common collector) 2SC3547A Unit: mm · Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage C Toshiba Semiconductor |
2SC3547 Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547 DESCRIPTION ·High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=2 Inchange Semiconductor |
2SC3547A NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications (common collector) 2SC3547A Unit: mm · Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage C Toshiba Semiconductor |
2SC3547A Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547A DESCRIPTION ·High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta= Inchange Semiconductor |
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