LTA400HF30-W データシート PDFこの部品の機能は「Tft Lcd」です。 |
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部品番号 |
LTA400HF30-W TFT LCD Global LCD Panel Exchange Center www.panelook.com 6$0681*&RQILGHQWLDO 5#/570)6(6.%& 02'(//7$+): 7KH,QIRUPDWLRQG Samsung |
文字列「 LTA400HF30 」「 400HF30 」で始まる検索結果です。 |
部品説明 |
CGHV40030 GaN HEMT CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplif Cree |
MA40030 Stripline Packaged Schottky Mixer Diodes Tyco |
MBR40030CT 400 Amp Rectifier 20 to 100 Volts Schottky Barrier MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR40020CT THRU MBR300100CT 400 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier c Micro Commercial Components |
MBR40030CT (MBR40020CT - MBR40040CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40020CT thru MBR40040CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Pa Naina Semiconductor |
MBR40030CT (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
MBR40030CT (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have GeneSiC |
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