LT3651-8.4 データシート PDFこの部品の機能は「MonolithIC 4a High Voltage 2-cell Li-ion Battery Charger」です。 |
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部品番号 |
LT3651-8.4 Monolithic 4A High Voltage 2-Cell Li-Ion Battery Charger LT3651-8.2/LT3651-8.4 Monolithic 4A High Voltage 2-Cell Li-Ion Battery Charger FEATURES DESCRIPTION n Wide Input Voltage Range: 9V to 32V (40V Absolute Maximum) n Programmable Charge Current Up Linear |
文字列「 LT365184 」「 3651 」で始まる検索結果です。 |
部品説明 |
2N3651 Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor |
2SC3651 NPN Epitaxial Planar Silicon Transistor Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage ( Sanyo Semicon Device |
2SC3651 Transistor SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolut Kexin |
2SK3651-01R N-CHANNEL SILICON POWER MOSFET 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterrupt Fuji Electric |
AK536512W 524288 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK536512W high density memory module is a CMOS dynamic RAM organized in 512K x 36 bit words. The module consists of sixteen standard 256K x 4 DRAMs in plastic SOJ packages and eight 256K x 1 DRAMs in PLCC packages. The assembly has ACCUTEK |
C3651 NPN Transistor - 2SC3651 Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage ( Sanyo |
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