LT1224 データシート PDFこの部品の機能は「Very High Speed Operational Amplifier」です。 |
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部品番号 |
LT1224 Very High Speed Operational Amplifier LT1224 Very High Speed Operational Amplifier FEATURES s s s s s s s s s s DESCRIPTIO Unity-Gain Stable 45MHz Gain-Bandwidth 400V/µs Slew Rate 7V/mV DC Gain: RL = 500Ω Maximum Input Offset Voltag Linear Technology |
文字列「 LT1224 」「 1224 」で始まる検索結果です。 |
部品説明 |
LT1224C Very High Speed Operational Amplifier LT1224 Very High Speed Operational Amplifier FEATURES s s s s s s s s s s DESCRIPTIO Unity-Gain Stable 45MHz Gain-Bandwidth 400V/µs Slew Rate 7V/mV DC Gain: RL = 500Ω Maximum Input Offset Voltage: 2mV ±12V Minimum Output Swing into 500Ω Wide Supply Range: ±2.5V to ±15V Linear Technology |
LT1224CN8 Very High Speed Operational Amplifier LT1224 Very High Speed Operational Amplifier FEATURES s s s s s s s s s s DESCRIPTIO Unity-Gain Stable 45MHz Gain-Bandwidth 400V/µs Slew Rate 7V/mV DC Gain: RL = 500Ω Maximum Input Offset Voltage: 2mV ±12V Minimum Output Swing into 500Ω Wide Supply Range: ±2.5V to ±15V Linear Technology |
LT1224CS8 Very High Speed Operational Amplifier LT1224 Very High Speed Operational Amplifier FEATURES s s s s s s s s s s DESCRIPTIO Unity-Gain Stable 45MHz Gain-Bandwidth 400V/µs Slew Rate 7V/mV DC Gain: RL = 500Ω Maximum Input Offset Voltage: 2mV ±12V Minimum Output Swing into 500Ω Wide Supply Range: ±2.5V to ±15V Linear Technology |
2SB1224 PNP/NPN Epitaxial Planar Silicon Darlington Transistors Ordering number:EN2210B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1224/2SD1826 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. Features · High DC current Sanyo Semicon Device |
2SD1224 Silicon NPN Epitaxial Type TRANSISTOR 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturati Toshiba Semiconductor |
2SK1224 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1224 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 Inchange Semiconductor |
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