LT1162CN データシート PDFこの部品の機能は「Half-/full-bridge N-channel Power Mosfet Drivers」です。 |
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部品番号 |
LT1162CN Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver Linear Technology |
文字列「 LT1162 」「 1162CN 」で始まる検索結果です。 |
部品説明 |
LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1162CSW Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1162IN Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1162ISW Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
2N1162 SILICON PNP TRANSISTOR New Jersey Semiconductor |
2SA1162 Silicon PNP Epitaxial Type Transistor 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 Toshiba Semiconductor |
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