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LT1160IN データシート PDF

この部品の機能は「Half-/full-bridge N-channel Power Mosfet Drivers」です。


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部品番号
LT1160IN

Half-/Full-Bridge N-Channel Power MOSFET Drivers


LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver


Linear Technology
Linear Technology

データシート pdf



文字列「 LT1160 」「 1160IN 」で始まる検索結果です。

部品説明

LT1160

Half-/Full-Bridge N-Channel Power MOSFET Drivers

LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV)

Linear Technology
Linear Technology

 データシート pdf


LT1160CN

Half-/Full-Bridge N-Channel Power MOSFET Drivers

LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV)

Linear Technology
Linear Technology

 データシート pdf


LT1160CS

Half-/Full-Bridge N-Channel Power MOSFET Drivers

LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV)

Linear Technology
Linear Technology

 データシート pdf


LT1160IS

Half-/Full-Bridge N-Channel Power MOSFET Drivers

LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV)

Linear Technology
Linear Technology

 データシート pdf


2SA1160

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SA1160

Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
TRANSYS Electronics Limited

 データシート pdf

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