LT1160IN データシート PDFこの部品の機能は「Half-/full-bridge N-channel Power Mosfet Drivers」です。 |
検索結果を表示する |
部品番号 |
LT1160IN Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver Linear Technology |
文字列「 LT1160 」「 1160IN 」で始まる検索結果です。 |
部品説明 |
LT1160 Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1160CN Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1160CS Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
LT1160IS Half-/Full-Bridge N-Channel Power MOSFET Drivers LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers FEATURES s s DESCRIPTION The LT ®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) Linear Technology |
2SA1160 Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 Toshiba Semiconductor |
2SA1160 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: - TRANSYS Electronics Limited |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |