LT1102MJ8 データシート PDFこの部品の機能は「High Speed/ Precision/ Jfet Input Instrumentation Amplifier(fixed Gain=10 Or 100)」です。 |
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部品番号 |
LT1102MJ8 High Speed/ Precision/ JFET Input Instrumentation Amplifier(Fixed Gain=10 or 100) Linear Technology |
文字列「 LT1102MJ8 」「 1102MJ8 」で始まる検索結果です。 |
部品説明 |
D110280 (D1102xx) D-Subminiature Accessories
ITT |
MABA-011028 Transformer MABA-011028 Transformer, 1:1 Transmission Line 600 - 1700 MHz Features Surface Mount 1:1 Impedance Excellent MoCA band performance Excellent amplitude and phase balance Can be used in both 50Ω and 75Ω systems 260°C Reflow Compatible RoHS* Complian MA-COM |
MADP-011028-14150T High Power PIN Diode MADP-011028-14150T High Power PIN Diode 50 MHz - 12 GHz Features 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss >19 dB Shunt Isolation < 35°C/W Therma MA-COM |
MJ11028 POWER TRANSISTOR(50A /60-120V /300W) A A A Mospec |
MJ11028 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 Motorola Semiconductors |
MJ11028 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Feature ON |
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