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Datasheet LT10A04 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LT10A04 | RECTIFIERS Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
|  ETC | rectifier |
| 2 | LT10A04 | PLASTIC SILICON RECTIFIERS LITE ON
POWER SEMICONDUCTOR
LT10A01 thru LT10A07
REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 10 Amperes
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition |  Lite-On Technology | rectifier |
| 3 | LT10A04 | 10A Rectifier LT10A01–LT10A07
Vishay Lite–On Power Semiconductor
10A Rectifier
Features
D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 600A peak D Low reverse leakage current D Plastic material – UL Recognition flammability classification 94V–0
14 42 |  Vishay | rectifier |
LT1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LT100-S | Current Sensor Датчик тока LT 100-S/SP30
Для электронного преобразования токов: постоянного, переменного, импульсного и т.д. в пропорциональный выходной ток с гальванической развязкой  LEM sensor | | |
| 2 | LT1000-1.5W | Unmounted Laser Diode Chips
LT1000-1.5W Power Series
TM
Unmounted Laser Diode Chips 1.5 Watts CW 808, 830 and 915 nm
LT1000-1.5W Features State-of-the-art MBE technology ̈ Enhanced optical output power ̈ TE or TM polarization ̈ Long diode lifetime ̈ High reliability
̈
LT1000-1.5W Applications Graph ETC diode | | |
| 3 | LT1000-15W | Unmounted Laser Diode Chips
LT1000-1.5W Power Series
TM
Unmounted Laser Diode Chips 1.5 Watts CW 808, 830 and 915 nm
LT1000-1.5W Features State-of-the-art MBE technology ̈ Enhanced optical output power ̈ TE or TM polarization ̈ Long diode lifetime ̈ High reliability
̈
LT1000-1.5W Applications Graph ETC diode | | |
| 4 | LT1000-SI | Current Transducer Current Transducer LT 1000-SI
For the electronic measurement of currents : DC, AC, pulsed..., with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
IPN
=
1000 A
Electrical data
IPN IP RM Primary nominal r.m.s. current Primary current, ETC data | | |
| 5 | LT10000-S | Current Transducer LT 10000-S LEM data | | |
| 6 | LT1001 | Precision Operational Amplifier U U
FEATURES
s Guaranteed Low Offset Voltage
LT1001AM
15µV max
LT1001C
60µV max
s Guaranteed Low Drift
LT1001AM 0.6µV/°C max
LT1001C 1.0µV/°C max
s Guaranteed Low Bias Current
LT1001AM
2nA max
LT1001C
4nA max
s Guaranteed CMRR
LT1001AM
114dB min
LT1001C
110dB min
s Guarante  Linear Technology amplifier | | |
| 7 | LT1001A | NPN SILICON HIGH FREQUENCY TRANSISTOR LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
B ØA 45° C
DESCRIPTION:
E
ØD
The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications.
F
G
H
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 200 mA 20 V 2.5 W @ TC = 50  Advanced Semiconductor transistor | |
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