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Datasheet LSI1032E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 LSI1032E    ISPLSI1032E

DataSheet.in ispLSI and pLSI 1032E ® ® High-Density Programmable Logic Features • HIGH DENSITY PROGRAMMABLE LOGIC — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State Machines, Address Dec
Lattice Semiconductor
Lattice Semiconductor
datasheet LSI1032E pdf

LSI10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
LSI1032E

ISPLSI1032E

DataSheet.in ispLSI and pLSI 1032E ® ® High-Density Programmable Logic Features • HIGH DENSITY PROGRAMMABLE LOGIC — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State M
Lattice Semiconductor
Lattice Semiconductor
datasheet pdf - Lattice Semiconductor
LSI1013XT1G

P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S-
LRC
LRC
datasheet pdf - LRC
LSI1013LT1G

P-Channel 1.8-V (G-S) MOSFET

LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S
LRC
LRC
datasheet pdf - LRC


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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