LSD3563-XX データシート PDFこの部品の機能は「Led Displays NumerIC 7-segment」です。 |
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部品番号 |
LSD3563-XX LED Displays Numeric 7-segment LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD3222-XX LSD3224-XX LSD3225-XX LSD3223-XX GaP λP Plus Opto |
文字列「 LSD3563 」「 3563 」で始まる検索結果です。 |
部品説明 |
2N3563 Silicon Transistors Central Semiconductor |
2N3563 NPN Epoxy - RF / IF Oscillator Advanced Semiconductor |
2N3563 RF Amplifier and Oscillators
National Semiconductor |
2SC3563 Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching ap Inchange Semiconductor |
2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit:mm Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sour Toshiba Semiconductor |
2SK3563 Field Effect Transistor Silicon N Channel MOS Type DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit:mm Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sour Toshiba Semiconductor |
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