LQH32PN100MN0L データシート PDFこの部品の機能は「Inductors」です。 |
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部品番号 |
LQH32PN100MN0L Inductors Inductors for Power Lines Wire Wound Type (Ferrite Core) Size Code 1210 (3225) in inch (in mm), 1.7mm max. Thickness c Appearance/ c Packaging 2.7±0.2 1.55±0.15 2.5±0.2 Thickness LQH32PN_N0 Dime Murata |
文字列「 LQH32PN100MN0 」「 32PN100MN0L 」で始まる検索結果です。 |
部品説明 |
LQH32PN100MN0K Inductors Inductors for Power Lines Wire Wound Type (Ferrite Core) Size Code 1210 (3225) in inch (in mm), 1.7mm max. Thickness c Appearance/ c Packaging 2.7±0.2 1.55±0.15 2.5±0.2 Thickness LQH32PN_N0 Dimensions A A 3.2±0.3 2.5±0.2 A: 2.8 max. LQH32PN_N0 Series 1210/3225 (inch/mm) Murata |
HYM321000GS-50 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module 1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns acc Siemens |
HYM321000GS-60 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module 1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns acc Siemens |
HYM321000S 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module 1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns acc Siemens |
NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated g NEC |
NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 • GAT CEL |
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