LQA10N200C データシート PDFこの部品の機能は「200v 10a Common-cathode Diode」です。 |
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部品番号 |
LQA10N200C 200V 10A Common-Cathode Diode LQA10T200C, LQA10N200C Qspeed™ Family 200 V, 10 A Common-Cathode Diode Product Summary IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 200 32. Power Integrations |
文字列「 LQA10N200 」「 10N200C 」で始まる検索結果です。 |
部品説明 |
AD10200 12-Bit 105 MSPS IF Sampling A/D Converter a Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning FEATURES Dual, 105 MSPS Minimum Sample Rate Channel-Channel Isolation, >80 dB AC-Coupled Signal Conditioning Included Gain Flatness up to Nyquist: < 0.2 dB Input VSWR 1.1:1 to Nyquis Analog Devices |
AMIS-710200 200dpi CIS Module AMIS-710200:200dpi CIS Module Data Sheet 1.0 General Description The AMIS-710200 (PI200MC-A4) is a contact image sensor (CIS) module. It is a long CIS using MOS image sensor technology for high-speed performance and high sensitivity. The AMIS-710200 is suitable for scanning A4 AMI SEMICONDUCTOR |
CDBZ310200-HF SMD Schottky Barrier Rectifiers SMD Schottky Barrier Rectifiers CDBZ310200-HF Reverse Voltage: 200 Volts Forward Current: 10 Amp RoHS Device Halogen free Features -Lead less chip form, no lead damage. -Low power loss, High efficiency. -High current capability, low VF. -Plastic package has Underwriters Laborato Comchip |
FMSK10200C-D2G (FMSK1020C-D2G - FMSK10200C-D2G) Schottky Barrier Rectifier FMSK1020C-D2G THRU FMSK10200C-D2G Schottky Barrier Rectifier (Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduc American First Semiconductor |
FMSK10200C-DG (FMSK1020C-DG - FMSK10200C-DG) Schottky Barrier Rectifier Schottky Barrier Rectifier FMSK1020C-DG THRU FMSK10200C-DG Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Guard ring for overvoltage protection • Low power loss, high American First Semiconductor |
HBR10200 Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device Inchange Semiconductor |
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