LPF1260T-151M データシート PDFこの部品の機能は「Smd Shielded Type」です。 |
検索結果を表示する |
部品番号 |
LPF1260T-151M SMD Shielded type LPF1260 Series http://www.abco.co.kr SMD Shielded type ▼Shape & Dimensions / Recommended Solder Land Pattern (Dimensions in mm) 12.0±0.3 6.0Max. 4.95±0.2 12.8 12.0±0.3 330 5.4 1.8±0.2 7.9±0 ABCO |
文字列「 LPF1260T151 」「 1260T 」で始まる検索結果です。 |
部品説明 |
1260PT Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1260PT Series RRooHHSS www.nellsemi.com Page 2 of 2 nELL |
2SB1260 Power Transistor 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ - ROHM Semiconductor |
2SB1260 PNP Plastic-Encapsulate Transistor 2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Weitron Technology |
2SB1260 POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) Unisonic Technologies |
2SD1260 Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N typ Panasonic Semiconductor |
2SD1260 Silicon PNP epitaxial planar type Darlington(For power amplification and switching) Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N typ Panasonic Semiconductor |
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