Datasheet LP4101LT3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LP4101LT3G	20V P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Curr	LRC

LP4101L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LP4101LT1G	20V P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalan	LRC
LP4101LT3G	20V P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalan	LRC

Esta página es del resultado de búsqueda del LP4101LT3G. Si pulsa el resultado de búsqueda de LP4101LT3G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap