LP171WU4-TLA3 データシート PDFこの部品の機能は「Display Module」です。 |
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部品番号 |
LP171WU4-TLA3 Display Module www.Datasheet.jp LP171WU4 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification ◆ ( ) Final Specification Title Customer MODEL 17.1” WUXGA LG |
文字列「 LP171WU4TLA3 」「 171WU4 」で始まる検索結果です。 |
部品説明 |
2DB1714 PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT 2DB1714 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type (2DD2 Diodes |
2N1714 Trans GP BJT NPN 3-Pin TO-5 New Jersey Semiconductor |
2SA1714 PNP Silicon Power Transistor DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or b NEC |
2SB1714 Bipolar transistor 2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ≤ -370mV, at IC ROHM Semiconductor |
2SD1714 Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATI Inchange Semiconductor |
A1714 VHF/UHF Triode 9.&e. VALVES VHF/UHF TRIODE A1714 ISSUE 4 A triode with planar electrodes for use as an RF oscillator at frequencies up to 1000 Mc/s or as a low noise amplifier at frequencies up to about 300 Mc/s. The A1714 is a commercial equivalent of CV408. In many applications the A1714 m GEC |
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