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LNJ806K5SRX データシート PDF

この部品の機能は「Surface Mounting Chip Led」です。


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部品番号
LNJ806K5SRX

Surface Mounting Chip LED


Surface Mounting Chip LED S − J Type 0.5 ± 0.1 Unit: mm 1.7 0.3 ± 0.1 1.9 ± 0.2 Conventional Part No. Global Prat No. Lighting Color 0.6 0.9 ± 0.1 1.0 ± 0.1 LNJ206R5RRX ········


Panasonic Semiconductor
Panasonic Semiconductor

データシート pdf



文字列「 LNJ806K5 」「 806K5SRX 」で始まる検索結果です。

部品説明

2518065007Y6

Chip Beads

High Current Part Number 9 9 9 9 9 9 9 9 Pkg. Size 0805 (2012) 0805 (2012) 1206 (3216) 1206 (3216) 1806 (4516) 1806 (4516) 1812 (4532) 50 MHz 47 94 39 96 36 75 92 Impedance (Ω) 100 500 MHz+ MHz 60 ±25% 120 ±25% 50 ±25% 120 ±25% 50 ±25% 100 ±25% 120 ±25% 88 158 68 137

ETC
ETC

 データシート pdf


2518065007Y6

Chip Beads

42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5

Fair Rite
Fair Rite

 データシート pdf


AD8065

Op Amps

Data Sheet FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G = +1) 180 V/µs slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide supply voltage range: 5 V t

Analog Devices
Analog Devices

 データシート pdf


APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw

Advanced Power Technology
Advanced Power Technology

 データシート pdf

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