Datasheet LNA2606L Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LNA2606L	GaAlAs on GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max. For optical control systems s Features • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type	Panasonic Semiconductor

LNA26 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LNA2603F	GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 Features High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 n	Panasonic Semiconductor
LNA2601L	GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-vie	Panasonic Semiconductor
LNA2606L	GaAlAs on GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max. For optical control systems s Features • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature,	Panasonic Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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