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Datasheet LNA2603F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | LNA2603F | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LNA2603F
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifeti |
Panasonic Semiconductor |
LNA26 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
LNA2603F | GaAs Infrared Light Emitting Diode |
Panasonic Semiconductor |
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LNA2601L | GaAs Infrared Light Emitting Diode |
Panasonic Semiconductor |
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LNA2606L | GaAlAs on GaAs Infrared Light Emitting Diode |
Panasonic Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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