Datasheet LN9926LT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LN9926LT1G	Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Fea	LRC

LN9926L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LN9926L	20V Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capabi	LRC
LN9926LT1G	Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive vo	LRC

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Número de pieza	Descripción	Fabricantes	PDF
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