LN9926L データシート PDFこの部品の機能は「20v Dual N-channel Enhancement-mode Mosfet」です。 |
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部品番号 |
LN9926L 20V Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features Advanced trench process technology High Densi LRC |
文字列「 LN9926 」「 9926L 」で始まる検索結果です。 |
部品説明 |
LN9926LT1G Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive vo LRC |
9926A FDW9926A FDW9926A March 2005 FDW9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power Fairchild Semiconductor |
9926A Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Conti Tuofeng Semiconductor |
9926B Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Co Tuofeng Semiconductor |
AF9926N N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET AF9926N Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggediz Anachip |
AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used Alpha Industries |
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