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Datasheet LN671 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LN671 | GaAlAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
4 5.3 max. 5.0±0.1 2.54±0.1 3
1.0±0.1
Unit : mm
1.8±0.3 0.8±0.2
Features
High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capabi |  Panasonic Semiconductor | diode |
LN6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LN60A01 | Triple N-Channel MOSFET The Future of Analog IC Technology
DESCRIPTION
The LN60A01 is a three channel, 600V NChannel, enhancement mode power FET manufactured in MPS's proprietary, highvoltage DMOS technology.
This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switchi  MPS mosfet | | |
| 2 | LN61C | GaAs INFRARED LIGHT EMITTING DIODE Panasonic Semiconductor diode | | |
| 3 | LN6206 | Low Power Low Dropout Middle Current Voltage Regulators LN6206
Low Power Low Dropout Middle Current Voltage Regulators
■ General Description
The LN6206 series are precise, low power consumption, high voltage; positive voltage regulators manufactured using CMOS and laser trimming technologies. The series provides large currents with a significantly sm  Natlinear regulator | | |
| 4 | LN65 | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emi Panasonic Semiconductor diode | | |
| 5 | LN66 | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wid Panasonic Semiconductor diode | | |
| 6 | LN66F | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
Unit : mm
For light source of remote control systems Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transp Panasonic Semiconductor diode | | |
| 7 | LN66L | GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0.15 2.54
For optical control systems Features
High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = Panasonic Semiconductor diode | |
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